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5pcs IRFZ34N IRFZ34 Fast Switching Power MOSFET Transistor HEXFET 29A 55V
In stock
Business & Industrial:Electrical Equipment & Supplies:Electronic Components & Semiconductors:Semiconductors & Actives:Transistors
IRFZ34N-5
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175C Operating Temperature
- Fast Switching
- Ease of Paralleling
VDSS = 55V
RDS(on) = 0.040Ω
ID = 29A
Fifth Gener...
$4.63
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- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175C Operating Temperature
- Fast Switching
- Ease of Paralleling
VDSS = 55V
RDS(on) = 0.040Ω
ID = 29A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 29 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO-220
Package Included:
5pcs IRFZ34N 29A 55V Fast Switching Power MOSFET Transistor HEXFET
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